MOSFET N-CH 75V 87A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 1046829-IRFB7740PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 143W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 87A (Tc)
Gate-Source Threshold Voltage: 3.7V @ 100μA
Max Gate Charge: 122nC @ 10V
Max Input Capacitance: 4650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.3 mOhm @ 52A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
N-Channel 75V 87A (Tc) 143W (Tc) Through Hole TO-220AB
MOSFET N-CH 75V 87A TO220AB Product overview: IRFB7740PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 87A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 87A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB7740PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 75V 87A TO220AB
MOSFET 75V Single N-Channel HEXFET Power
MOSFET, N-CH, 75V, 87A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB7740PBF | 1046829-IRFB7740PBF | IRFB7740PBF-ND | 278-IRFB7740PBF | IRFB7740PBF | IRFB7740PBF | 31Y2060 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7740PBF | Single FETs, MOSFETs | 75V 87A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 75V, 87A, To-220Ab-3; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | ||||
| IDSS | 87000 milliamps | 85000 milliamps | |||||
| PD | 143000 milliwatts | 143000 milliwatts | 143 milliwatts |
