Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7740PBF IRFB7740PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046829-IRFB7740PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 143W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 87A (Tc) Gate-Source Threshold Voltage: 3.7V @ 100μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 4650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 52A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7740PBF - 1046829-IRFB7740PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFB7740PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFB7740PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB7740PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 75V, 87A, To-220Ab-3; Transistor Polarity Infineon - 31Y2060 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046829-IRFB7740PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 143W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 87A (Tc) Gate-Source Threshold Voltage: 3.7V @ 100μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 4650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 52A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7740PBF - 1046829-IRFB7740PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7740PBF
1046829-IRFB7740PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7740PBF 1046829-IRFB7740PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046829-IRFB7740PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 143W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 87A (Tc) Gate-Source Threshold Voltage: 3.7V @ 100μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 4650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 52A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046829-IRFB7740PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 143W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 87A (Tc)
Gate-Source Threshold Voltage: 3.7V @ 100μA
Max Gate Charge: 122nC @ 10V
Max Input Capacitance: 4650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.3 mOhm @ 52A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
75V 87A MOSFET Transistor
278-IRFB7740PBF
75V 87A MOSFET Transistor 278-IRFB7740PBF
MOSFET N-CH 75V 87A TO220AB Product overview: IRFB7740PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 87A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 87A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB7740PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 75V 87A TO220AB Product overview: IRFB7740PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 87A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 87A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB7740PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB7740PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB7740PBF
Single FETs, MOSFETs IRFB7740PBF
MOSFET N-CH 75V 87A TO220AB

MOSFET N-CH 75V 87A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB7740PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB7740PBF-ND
Single FETs, MOSFETs IRFB7740PBF-ND
N-Channel 75V 87A (Tc) 143W (Tc) Through Hole TO-220AB

N-Channel 75V 87A (Tc) 143W (Tc) Through Hole TO-220AB

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFB7740PBF
MOSFET IRFB7740PBF
MOSFET 75V Single N-Channel HEXFET Power

MOSFET 75V Single N-Channel HEXFET Power

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB7740PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB7740PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB7740PBF
MOSFET N-CH 75V 87A TO220AB

MOSFET N-CH 75V 87A TO220AB

Supplier's Site
Mosfet, N-Ch, 75V, 87A, To-220Ab-3; Transistor Polarity Infineon - 31Y2060 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 75V, 87A, To-220Ab-3; Transistor Polarity Infineon
31Y2060
Mosfet, N-Ch, 75V, 87A, To-220Ab-3; Transistor Polarity Infineon 31Y2060
MOSFET, N-CH, 75V, 87A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power RoHS Compliant: Yes

MOSFET, N-CH, 75V, 87A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046829-IRFB7740PBF 278-IRFB7740PBF IRFB7740PBF IRFB7740PBF-ND IRFB7740PBF IRFB7740PBF 31Y2060
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7740PBF 75V 87A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 75V, 87A, To-220Ab-3; Transistor Polarity Infineon
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 75 volts 75 volts 75 volts
PD 143000 milliwatts 143 milliwatts 143000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
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