Manufacturer: Infineon Technologies
Win Source Part Number: 1046827-IRFB7546PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 99W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 3.7V @ 100μA
Max Gate Charge: 87nC @ 10V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.3 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 60V 75A TO220AB
N-Channel 60V 75A (Tc) 99W (Tc) Through Hole TO-220AB
MOSFET, N CHANNEL, 60V, 75A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V; MSL:-RoHS Compliant: Yes
MOSFET MOSFET N CH 60V 75A TO-220AB
MOSFET N-CH 60V 75A TO220AB
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1046827-IRFB7546PBF | IRFB7546PBF | IRFB7546PBF-ND | 2605867 | 43X7205 | IRFB7546PBF | IRFB7546PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7546PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | Mosfet, N Channel, 60V, 75A, To-220Ab-3; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 99000 milliwatts | 99000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
