N-Channel 60V 195A (Tc) 294W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 802108-IRFB7534PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 294W (Tc)
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.4mOhm at 100A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 279nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 10034pF at 25V
Current - Continuous Drain (Id) at 25°C: 195A (Tc)
Vgs(th) (Maximum) at Id: 3.7V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 60V 195A TO220AB Product overview: IRFB7534PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB7534PBF can be used for catalog matching and distributor lookup.
60V 195A 2.4mΩ@10V,100A 294W 3.7V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET N-CH 60V 195A TO220AB
MOSFET MOSFET N CH 60V 195A TO-220AB
MOSFET N-CH 60V 195A TO220AB
| DigiKey | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 448-IRFB7534PBF-ND | 802108-IRFB7534PBF | 2575839P | 278-IRFB7534PBF | IRFB7534PBF | IRFB7534PBF | IRFB7534PBF | IRFB7534PBF |
| Product Name | Single FETs, MOSFETs | FETs - Single - IRFB7534PBF | MOSFETs | 60V 195A MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220 | Tube | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| PD | 294000 milliwatts | 294 milliwatts | 294000 milliwatts | 294000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Packing Method | Tube; Tube | Tube | Tube; Tube |
