Manufacturer: Infineon Technologies
Win Source Part Number: 083702-IRFB7434PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 294W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 250μA
Max Gate Charge: 324nC @ 10V
Max Input Capacitance: 10820pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 100A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
N-Channel 40V 195A (Tc) 294W (Tc) Through Hole TO-220AB
MOSFET N-CH 40V 195A TO220AB Product overview: IRFB7434PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB7434PBF can be used for catalog matching and distributor lookup.
MOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC
MOSFET N-CH 40V 195A TO220AB
MOSFET N-CH 40V 195A TO220AB
40V 195A 1.6mΩ@10V,100A 294W 3.9V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET Transistor, N Channel, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET TRANSISTOR, N CHANNEL, 195 A, 40 V, 0.00125 OHM, 10 V, 3 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 083702-IRFB7434PBF | IRFB7434PBF-ND | 2579357 | 278-IRFB7434PBF | IRFB7434PBF | IRFB7434PBF | IRFB7434PBF | IRFB7434PBF | 53W9268 | 66789849 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7434PBF | Single FETs, MOSFETs | MOSFETs | 40V 195A MOSFET Transistor | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet Transistor, N Channel, 195 A, 40 V, 0.00125 Ohm, 10 V, 3 V Rohs Compliant Infineon | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | 40 volts | ||||||
| PD | 294000 milliwatts | 294 milliwatts | 294000 milliwatts | 294000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-3 |
