MOSFET N-CH 150V 60A TO220AB
IRFB61N15 - 12V-300V N-CHANNEL P
Manufacturer: Infineon Technologies
Win Source Part Number: 083668-IRFB61N15DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 3470pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 32 mOhm @ 36A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET N-CH 150V 60A TO220AB Product overview: IRFB61N15DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB61N15DPBF can be used for catalog matching and distributor lookup.
N-Channel 150V 60A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB
MOSFET N-CH 150V 60A TO220AB
MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.032Ohm;ID 60A;TO-220AB;PD 330W;VGS +/-30V
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB61N15DPBF | 083668-IRFB61N15DPBF | 278-IRFB61N15DPBF | IRFB61N15DPBF-ND | IRFB61N15DPBF | IRFB61N15DPBF | 70017262 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB61N15DPBF | 150V 60A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.032Ohm;ID 60A;TO-220AB;PD 330W;VGS +/-30V |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | ||||
| IDSS | 60000 milliamps | ||||||
| PD | 2400 milliwatts | 2400 to 330000 milliwatts | 2400 milliwatts | 330000 milliwatts |
