N-Channel 200V 25A (Tc) 144W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 083667-IRFB5620PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 144W (Tc)
Family Name: IRFB5620
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1710pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 72.5 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): FQP34N20L; PHP33NQ20T; IXTP32N20T; PHP33NQ20T,127;
Introduction Date: September 05, 2008
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 25A TO220AB Product overview: IRFB5620PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB5620PBF can be used for catalog matching and distributor lookup.
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| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB5620PBF-ND | 083667-IRFB5620PBF | 278-IRFB5620PBF | 6886973 | 85R5379 | IRFB5620PBF | IRFB5620PBF | IRFB5620PBF | IRFB5620PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB5620PBF | 200V 25A MOSFET Transistor | MOSFETs | Mosfet, Class D, 200V, To220Ab; Channel Type Infineon | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | Tube | TO-220; To-220ab | TO-3 | TO-220 | TO-220; TO-220-3 | 38 nC @ 10 V | |
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||||
| PD | 144000 milliwatts | 144 milliwatts | 144000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
