Infineon Technologies AG MOSFETs IRFB5620PBF

MOSFET N-Ch 200V 25A Audio HEXFET TO220A

MOSFET N-Ch 200V 25A Audio HEXFET TO220A

N-Channel 200V 25A (Tc) 144W (Tc) Through Hole TO-220AB

MOSFET N-CH 200V 25A TO220AB Product overview: IRFB5620PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB5620PBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 083667-IRFB5620PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 144W (Tc)
Family Name: IRFB5620
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1710pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 72.5 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): FQP34N20L; PHP33NQ20T; IXTP32N20T; PHP33NQ20T,127;
Introduction Date: September 05, 2008
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance