MOSFET N-CH 150V 35A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 083784-IRFB5615PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 144W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1750pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 39 mOhm @ 21A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB
MOSFET Transistor, N Channel, 35 A, 150 V, 32 mohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 150V 35A TO220AB
150V 35A 144W 39mΩ@10V,21A 5V@100uA N Channel ITO-220AB-3 MOSFETs ROHS
MOSFET Audio MOSFT 150V 34A 41mOhm 26nC
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB5615PBF | 083784-IRFB5615PBF | 448-IRFB5615PBF-ND | 83R9938 | IRFB5615PBF | IRFB5615PBF | IRFB5615PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB5615PBF | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 35 A, 150 V, 32 Mohm, 10 V, 3 V Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | ||||
| IDSS | 35000 milliamps | ||||||
| PD | 144000 milliwatts | 144000 milliwatts | 144000 milliwatts |
