Infineon Technologies AG Single FETs, MOSFETs IRFB5615PBF

Description
N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB
  • Single FETs, MOSFETs - 448-IRFB5615PBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB5615PBF - 083784-IRFB5615PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFB5615PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB5615PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 35 A, 150 V, 32 Mohm, 10 V, 3 V Rohs Compliant Infineon - 83R9938 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 448-IRFB5615PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IRFB5615PBF-ND
Single FETs, MOSFETs 448-IRFB5615PBF-ND
N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB

N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB5615PBF - 083784-IRFB5615PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB5615PBF
083784-IRFB5615PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB5615PBF 083784-IRFB5615PBF
Manufacturer: Infineon Technologies Win Source Part Number: 083784-IRFB5615PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 144W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1750pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 39 mOhm @ 21A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 083784-IRFB5615PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 144W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1750pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 39 mOhm @ 21A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRFB5615PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB5615PBF
Single FETs, MOSFETs IRFB5615PBF
MOSFET N-CH 150V 35A TO220AB

MOSFET N-CH 150V 35A TO220AB

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRFB5615PBF
Triode/MOS Tube/Transistor >> MOSFETs IRFB5615PBF
150V 35A 144W 39mΩ@10V,21A 5V@100uA N Channel ITO-220AB-3 MOSFETs ROHS

150V 35A 144W 39mΩ@10V,21A 5V@100uA N Channel ITO-220AB-3 MOSFETs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFB5615PBF
MOSFET IRFB5615PBF
MOSFET Audio MOSFT 150V 34A 41mOhm 26nC

MOSFET Audio MOSFT 150V 34A 41mOhm 26nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB5615PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB5615PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB5615PBF
MOSFET N-CH 150V 35A TO220AB

MOSFET N-CH 150V 35A TO220AB

Supplier's Site
Mosfet Transistor, N Channel, 35 A, 150 V, 32 Mohm, 10 V, 3 V Rohs Compliant Infineon - 83R9938 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 35 A, 150 V, 32 Mohm, 10 V, 3 V Rohs Compliant Infineon
83R9938
Mosfet Transistor, N Channel, 35 A, 150 V, 32 Mohm, 10 V, 3 V Rohs Compliant Infineon 83R9938
MOSFET Transistor, N Channel, 35 A, 150 V, 32 mohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 35 A, 150 V, 32 mohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 448-IRFB5615PBF-ND 083784-IRFB5615PBF IRFB5615PBF IRFB5615PBF IRFB5615PBF IRFB5615PBF 83R9938
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB5615PBF Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 35 A, 150 V, 32 Mohm, 10 V, 3 V Rohs Compliant Infineon
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220 TO-220; TO-220-3 TO-3
V(BR)DSS 150 volts 150 volts 150 volts
PD 144000 milliwatts 144000 milliwatts 144000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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