The IRFB52N15DPbF is an N-channel MOSFET designed for high-frequency DC-DC converters and plasma display panels, housed in a TO-220AB package. It has a drain-source breakdown voltage of 150 V and a maximum continuous drain current of 51 A at 25°C, with an on-resistance of 32 mΩ at 10 V gate-source voltage. The device supports a maximum junction temperature of 175°C and features a minimum avalanche voltage of 200 V and single-pulse avalanche energy of 470 mJ. The package is rated for lead-free assembly and complies with RoHS standards.
N CHANNEL MOSFET, 150V, 60A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 27AC6772 |
| Product Name | N Channel Mosfet, 150V, 60A, To-220Ab; Channel Type Infineon |
| Polarity | N-Channel |
