MOSFET N-CH 150V 51A TO220AB Product overview: IRFB52N15DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB52N15DPBF can be used for catalog matching and distributor lookup.
N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 083701-IRFB52N15DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Family Name: IRFB52N15
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 89nC @ 10V
Max Input Capacitance: 2770pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 32 mOhm @ 36A, 10V
Alternative Parts (Cross-Reference): IXTP62N15PSN; FDP79N15; STP75N15; STP40NS15;
Introduction Date: November 07, 2003
ECCN: EAR99
Country of Origin: China, Mexico, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
MOSFET N-CH 150V 51A TO220AB
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg
MOSFET, N CHANNEL, 150V, 60 AMP, 0.032 OHM, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
DISCONTINUED BY MANUFACTURER, MOSFET, N CHANNEL, 150V, 60 AMP, 0.032 OHM, TO-220AB, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
MOSFET MOSFT 150V 60A 32mOhm 60nC
MOSFET N-CH 150V 51A TO220AB
N CHANNEL MOSFET, 150V, 60A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Allied Electronics, Inc. | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFB52N15DPBF | 2626748P | IRFB52N15DPBF-ND | 083701-IRFB52N15DPBF | IRFB52N15DPBF | 70017500 | 66789831 | IRFB52N15DPBF | IRFB52N15DPBF | 63J6721 |
| Product Name | 150V 51A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB52N15DPBF | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 150V, 60A, To-220Ab; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | 150 volts | ||||||
| PD | 320 milliwatts | 3800 to 230000 milliwatts | 3800 milliwatts | 230000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
