Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB52N15DPBF IRFB52N15DPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 083701-IRFB52N15DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Family Name: IRFB52N15 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2770pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 32 mOhm @ 36A, 10V Alternative Parts (Cross-Reference): IXTP62N15PSN; FDP79N15; STP75N15; STP40NS15; Introduction Date: November 07, 2003 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 083701-IRFB52N15DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Family Name: IRFB52N15 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2770pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 32 mOhm @ 36A, 10V Alternative Parts (Cross-Reference): IXTP62N15PSN; FDP79N15; STP75N15; STP40NS15; Introduction Date: November 07, 2003 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB52N15DPBF - 083701-IRFB52N15DPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB52N15DPBF
083701-IRFB52N15DPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB52N15DPBF 083701-IRFB52N15DPBF
Manufacturer: Infineon Technologies Win Source Part Number: 083701-IRFB52N15DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Family Name: IRFB52N15 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2770pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 32 mOhm @ 36A, 10V Alternative Parts (Cross-Reference): IXTP62N15PSN; FDP79N15; STP75N15; STP40NS15; Introduction Date: November 07, 2003 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 083701-IRFB52N15DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Family Name: IRFB52N15
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 89nC @ 10V
Max Input Capacitance: 2770pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 32 mOhm @ 36A, 10V
Alternative Parts (Cross-Reference): IXTP62N15PSN; FDP79N15; STP75N15; STP40NS15;
Introduction Date: November 07, 2003
ECCN: EAR99
Country of Origin: China, Mexico, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFB52N15DPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB52N15DPBF-ND
Single FETs, MOSFETs IRFB52N15DPBF-ND
N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB

N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
150V 51A MOSFET Transistor
278-IRFB52N15DPBF
150V 51A MOSFET Transistor 278-IRFB52N15DPBF
MOSFET N-CH 150V 51A TO220AB Product overview: IRFB52N15DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB52N15DPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 51A TO220AB Product overview: IRFB52N15DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB52N15DPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2626748P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626748P
MOSFETs 2626748P
Infineon MOSFET IRFB52N15DPBF

Infineon MOSFET IRFB52N15DPBF

Supplier's Site
MOSFETs - 2626747 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626747
MOSFETs 2626747
Infineon MOSFET IRFB52N15DPBF

Infineon MOSFET IRFB52N15DPBF

Supplier's Site
MOSFETs - 2626748 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626748
MOSFETs 2626748
Infineon MOSFET IRFB52N15DPBF

Infineon MOSFET IRFB52N15DPBF

Supplier's Site
N Channel Mosfet, 150V, 60A, To-220Ab; Channel Type Infineon - 63J6721 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 150V, 60A, To-220Ab; Channel Type Infineon
63J6721
N Channel Mosfet, 150V, 60A, To-220Ab; Channel Type Infineon 63J6721
N CHANNEL MOSFET, 150V, 60A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 150V, 60A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB52N15DPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB52N15DPBF
Single FETs, MOSFETs IRFB52N15DPBF
MOSFET N-CH 150V 51A TO220AB

MOSFET N-CH 150V 51A TO220AB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 150V 60A 32mOhm 60nC

MOSFET MOSFT 150V 60A 32mOhm 60nC

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg - 70017500 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg
70017500
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg 70017500
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB52N15DPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB52N15DPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB52N15DPBF
MOSFET N-CH 150V 51A TO220AB

MOSFET N-CH 150V 51A TO220AB

Supplier's Site
Transistor - 66789831 - Radwell International
Willingboro, NJ, United States
Transistor
66789831
Transistor 66789831
MOSFET, N CHANNEL, 150V, 60 AMP, 0.032 OHM, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CHANNEL, 150V, 60 AMP, 0.032 OHM, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Transistor - 17634042 - Radwell International
Willingboro, NJ, United States
Transistor
17634042
Transistor 17634042
DISCONTINUED BY MANUFACTURER, MOSFET, N CHANNEL, 150V, 60 AMP, 0.032 OHM, TO-220AB, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, MOSFET, N CHANNEL, 150V, 60 AMP, 0.032 OHM, TO-220AB, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. RS Components, Ltd. Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 083701-IRFB52N15DPBF IRFB52N15DPBF-ND 278-IRFB52N15DPBF 2626748P 63J6721 IRFB52N15DPBF IRFB52N15DPBF 70017500 IRFB52N15DPBF 66789831
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB52N15DPBF Single FETs, MOSFETs 150V 51A MOSFET Transistor MOSFETs N Channel Mosfet, 150V, 60A, To-220Ab; Channel Type Infineon Single FETs, MOSFETs MOSFET MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts 150 volts 150 volts 150 volts
PD 3800 to 230000 milliwatts 320 milliwatts 3800 milliwatts 230000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 Tube TO-220; TO-220 TO-3; TO-220 TO-220; TO-220-3 TO-220 TO-220; TO-220-3
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