Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4710 IRFB4710

Manufacturer: Infineon Technologies Win Source Part Number: 040711-IRFB4710 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 6160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited