Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4710 IRFB4710

Manufacturer: Infineon Technologies
Win Source Part Number: 040711-IRFB4710
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 6160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

MOSFET N-CH 100V 75A TO-220AB Product overview: IRFB4710 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 75A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFB4710 can be used for catalog matching and distributor lookup.