Infineon Technologies AG Single FETs, MOSFETs IRFB4510GPBF

Description
N-Channel 100V 62A (Tc) 140W (Tc) Through Hole TO-220AB
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Description
N-Channel 100V 62A (Tc) 140W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

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Single FETs, MOSFETs - IRFB4510GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB4510GPBF-ND
Single FETs, MOSFETs IRFB4510GPBF-ND
N-Channel 100V 62A (Tc) 140W (Tc) Through Hole TO-220AB

N-Channel 100V 62A (Tc) 140W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4510GPBF - 777043-IRFB4510GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4510GPBF
777043-IRFB4510GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4510GPBF 777043-IRFB4510GPBF
Manufacturer: Infineon Technologies Win Source Part Number: 777043-IRFB4510GPBF Series: HEXFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Part Status: Obsolete(EOL) Family Name: IRFB4510G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3180pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 140W (Tc) Rds On (Maximum) @ Id, Vgs: 13.5 mOhm @ 37A, 10V Alternative Parts (Cross-Reference): AP75T10GP-HF; BUK7510-100B,127; BUK9510-100B,127; BUK9510-100B; Introduction Date: April 11, 2012 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: Infineon Technologies
Win Source Part Number: 777043-IRFB4510GPBF
Series: HEXFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Part Status: Obsolete(EOL)
Family Name: IRFB4510G
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3180pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 140W (Tc)
Rds On (Maximum) @ Id, Vgs: 13.5 mOhm @ 37A, 10V
Alternative Parts (Cross-Reference): AP75T10GP-HF; BUK7510-100B,127; BUK9510-100B,127; BUK9510-100B;
Introduction Date: April 11, 2012
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB4510GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB4510GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB4510GPBF
MOSFET N CH 100V 62A TO-220AB

MOSFET N CH 100V 62A TO-220AB

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFB4510GPBF-ND 777043-IRFB4510GPBF IRFB4510GPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4510GPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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