Manufacturer: Infineon Technologies
Win Source Part Number: 090494-IRFB4410PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 88A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 5150pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 58A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
N-Channel 100V 88A (Tc) 200W (Tc) Through Hole TO-220AB
MOSFET N-CH 100V 88A TO220AB Product overview: IRFB4410PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 88A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 88A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4410PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 88A TO220AB
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V
MOSFET MOSFT 100V 96A 10mOhm 120nC
MOSFET N-CH 100V 88A TO220AB
MOSFET TRANSISTOR, N CHANNEL, 96 A, 100 V, 0.008 OHM, 20 V, 4 V ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET Transistor, N Channel, 96 A, 100 V, 0.008 ohm, 20 V, 4 V RoHS Compliant: Yes
| RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2575823P | 090494-IRFB4410PBF | IRFB4410PBF-ND | 278-IRFB4410PBF | IRFB4410PBF | 70017255 | IRFB4410PBF | IRFB4410PBF | 21292658 | 97K1977 |
| Product Name | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4410PBF | Single FETs, MOSFETs | 100V 88A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V | MOSFET | Single FETs, MOSFETs | Transistor | Mosfet Transistor, N Channel, 96 A, 100 V, 0.008 Ohm, 20 V, 4 V Rohs Compliant Infineon |
| Package Type | TO-263; TO-263 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 | TO-220 | TO-220; TO-220-3 | TO-3 | ||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||||
| PD | 200000 milliwatts | 250 milliwatts | 200000 milliwatts | 200000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
