Infineon Technologies AG Single FETs, MOSFETs IRFB4321PBF

N-Channel 150V 85A (Tc) 350W (Tc) Through Hole TO-220AB

MOSFET N-Channel 150V 85A HEXFET TO220AB

MOSFET N-Channel 150V 85A HEXFET TO220AB

IRFB4321 - 12V-300V N-CHANNEL PO

MOSFET N-CH 150V 85A TO220AB

Manufacturer: Infineon Technologies
Win Source Part Number: 089358-IRFB4321PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Family Name: IRFB4321
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 85A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4460pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 15 mOhm @ 33A, 10V
Alternative Parts (Cross-Reference): FDP2532-F063; SUP90N15-18P-E3; STP85N15F4; STP90N15F4;
Introduction Date: June 23, 2006
ECCN: EAR99
Country of Origin: China, Germany, Malaysia, Philippines, Republic of Korea, Taiwan
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient