Infineon Technologies AG Single FETs, MOSFETs IRFB4321GPBF

Description
N-Channel 150V 83A (Tc) 330W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 150V 83A (Tc) 330W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFB4321GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB4321GPBF-ND
Single FETs, MOSFETs IRFB4321GPBF-ND
N-Channel 150V 83A (Tc) 330W (Tc) Through Hole TO-220AB

N-Channel 150V 83A (Tc) 330W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4321GPBF - 040710-IRFB4321GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4321GPBF
040710-IRFB4321GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4321GPBF 040710-IRFB4321GPBF
Manufacturer: Infineon Technologies Win Source Part Number: 040710-IRFB4321GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 330W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 83A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 4460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 15 mOhm @ 33A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: Infineon Technologies
Win Source Part Number: 040710-IRFB4321GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 83A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4460pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 15 mOhm @ 33A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Singapore
150V 83A MOSFET Transistor
278-IRFB4321GPBF
150V 83A MOSFET Transistor 278-IRFB4321GPBF
MOSFET N-CH 150V 83A TO220AB Product overview: IRFB4321GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 83A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 83A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4321GPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 83A TO220AB Product overview: IRFB4321GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 83A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 83A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4321GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB4321GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB4321GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB4321GPBF
MOSFET N-CH 150V 83A TO220AB

MOSFET N-CH 150V 83A TO220AB

Supplier's Site
MOSFET N-CH 150V 83A TO-220AB - 376-IRFB4321GPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 150V 83A TO-220AB
376-IRFB4321GPBF
MOSFET N-CH 150V 83A TO-220AB 376-IRFB4321GPBF
MOSFET N-CH 150V 83A TO-220AB

MOSFET N-CH 150V 83A TO-220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFB4321GPBF-ND 040710-IRFB4321GPBF 278-IRFB4321GPBF IRFB4321GPBF 376-IRFB4321GPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4321GPBF 150V 83A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 150V 83A TO-220AB
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3
V(BR)DSS 150 volts 150 volts
PD 330000 milliwatts 330000 milliwatts 330000 milliwatts
Unlock Full Specs
to access all available technical data