Infineon Technologies AG Single FETs, MOSFETs IRFB4310ZPBFXKMA1

The IRFB4310ZPbF is a 100V N-channel HEXFET power MOSFET designed for high-efficiency synchronous rectification and high-speed switching applications. It is available in TO-220AB, D2Pak, and TO-262 packages. The device has a typical on-resistance of 4.8 mΩ at 10V gate voltage and 75A drain current, with a maximum continuous drain current of 127A at 25°C and 90A at 100°C. It supports a pulsed drain current of 560A, operates from -55°C to +175°C junction temperature, and has a maximum power dissipation of 250W. The MOSFET meets RoHS standards and is qualified for industrial use. Thermal resistance is 0.6°C/W junction-to-case and 62°C/W junction-to-ambient in TO-220 mounting. It features a rugged avalanche capability with single-pulse energy up to 475 mJ and enhanced body diode performance.