MOSFET N-CH 100V 120A TO220AB Product overview: IRFB4310ZPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4310ZPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 090724-IRFB4310ZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Family Name: IRFB4310Z
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 6860pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): IXFP180N10T2; SUP70060E-GE3; FDP054N10;
Introduction Date: March 05, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFB4310ZPBF | 090724-IRFB4310ZPBF | 2579349 | IRFB4310ZPBF | IRFB4310ZPBF-ND | 376-IRFB4310ZPBF | IRFB4310ZPBF | IRFB4310ZPBF |
| Product Name | 100V 120A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4310ZPBF | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET N-CH 100V 120A TO-220AB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| PD | 250 milliwatts | 250000 milliwatts | 250000 milliwatts | 250000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
