N-Channel 200V 44A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069456-IRFB42N20DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 44A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 3430pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 55 mOhm @ 26A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
MOSFET N-CH 200V 44A TO220AB Product overview: IRFB42N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB42N20DPBF can be used for catalog matching and distributor lookup.
IRFB42N20 - 12V-300V N-CHANNEL P
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V
MOSFET N-CH 200V 44A TO220AB
MOSFET 200V SINGLE N-CH 55mOhms 91nC
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB42N20DPBF-ND | 069456-IRFB42N20DPBF | 278-IRFB42N20DPBF | IRFB42N20DPBF | 70017535 | IRFB42N20DPBF | IRFB42N20DPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB42N20DPBF | 200V 44A MOSFET Transistor | Single FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | Tube | TO-220; TO-220-3 | TO-220 | TO-220; TO-220-3 | |
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||
| PD | 2400 to 330000 milliwatts | 2400 milliwatts | 2400 milliwatts | 330000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
