Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB42N20DPBF IRFB42N20DPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069456-IRFB42N20DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 330W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 44A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 3430pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 55 mOhm @ 26A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB42N20DPBF - 069456-IRFB42N20DPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFB42N20DPBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFB42N20DPBF-ND - DigiKey
    DigiKey
  • MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V - 70017535 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB42N20DPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 069456-IRFB42N20DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 330W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 44A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 3430pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 55 mOhm @ 26A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB42N20DPBF - 069456-IRFB42N20DPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB42N20DPBF
069456-IRFB42N20DPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB42N20DPBF 069456-IRFB42N20DPBF
Manufacturer: Infineon Technologies Win Source Part Number: 069456-IRFB42N20DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 330W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 44A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 3430pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 55 mOhm @ 26A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 069456-IRFB42N20DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 44A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 3430pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 55 mOhm @ 26A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - IRFB42N20DPBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB42N20DPBF
Single FETs, MOSFETs IRFB42N20DPBF
IRFB42N20 - 12V-300V N-CHANNEL P

IRFB42N20 - 12V-300V N-CHANNEL P

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB42N20DPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB42N20DPBF-ND
Single FETs, MOSFETs IRFB42N20DPBF-ND
N-Channel 200V 44A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB

N-Channel 200V 44A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
200V 44A MOSFET Transistor
278-IRFB42N20DPBF
200V 44A MOSFET Transistor 278-IRFB42N20DPBF
MOSFET N-CH 200V 44A TO220AB Product overview: IRFB42N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB42N20DPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 44A TO220AB Product overview: IRFB42N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 44A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 44A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB42N20DPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFB42N20DPBF
MOSFET IRFB42N20DPBF
MOSFET 200V SINGLE N-CH 55mOhms 91nC

MOSFET 200V SINGLE N-CH 55mOhms 91nC

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V - 70017535 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V
70017535
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V 70017535
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB42N20DPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB42N20DPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB42N20DPBF
MOSFET N-CH 200V 44A TO220AB

MOSFET N-CH 200V 44A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 069456-IRFB42N20DPBF IRFB42N20DPBF IRFB42N20DPBF-ND 278-IRFB42N20DPBF IRFB42N20DPBF 70017535 IRFB42N20DPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB42N20DPBF Single FETs, MOSFETs Single FETs, MOSFETs 200V 44A MOSFET Transistor MOSFET MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.055Ohm;ID 44A;TO-220AB;PD 330W;VGS +/-30V Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts 200 volts
PD 2400 to 330000 milliwatts 2400 milliwatts 2400 milliwatts 330000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 Tube TO-220 TO-220; TO-220-3
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