Infineon Technologies AG 250V 46A MOSFET Transistor IRFB4229

Description
MOSFET N-CH 250V 46A TO-220AB Product overview: IRFB4229 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 46A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFB4229 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 250V 46A TO-220AB Product overview: IRFB4229 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 46A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFB4229 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
250V 46A MOSFET Transistor
285-IRFB4229
250V 46A MOSFET Transistor 285-IRFB4229
MOSFET N-CH 250V 46A TO-220AB Product overview: IRFB4229 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 46A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFB4229 can be used for catalog matching and distributor lookup.

MOSFET N-CH 250V 46A TO-220AB Product overview: IRFB4229 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 46A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFB4229 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4229 - 205342-IRFB4229 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4229
205342-IRFB4229
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4229 205342-IRFB4229
Manufacturer: Infineon Technologies Win Source Part Number: 205342-IRFB4229 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 330W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 46A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 4560pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 46 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205342-IRFB4229
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4560pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 46 mOhm @ 26A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 165015703 - Radwell International
Willingboro, NJ, United States
Transistor
165015703
Transistor 165015703
DISCONTINUED BY MANUFACTURER, TRANSISTOR, 250V, 46A, N CHANNEL, POWER MOSFET, SINGLE, TO-220. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, 250V, 46A, N CHANNEL, POWER MOSFET, SINGLE, TO-220. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 285-IRFB4229 205342-IRFB4229 165015703
Product Name 250V 46A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4229 Transistor
Polarity N-Channel N-Channel; N-Channel
PD 330000 milliwatts 330000 milliwatts
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
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