MOSFET N-CH 250V 46A TO-220AB Product overview: IRFB4229 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 46A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFB4229 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 205342-IRFB4229
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4560pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 46 mOhm @ 26A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
DISCONTINUED BY MANUFACTURER, TRANSISTOR, 250V, 46A, N CHANNEL, POWER MOSFET, SINGLE, TO-220. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 285-IRFB4229 | 205342-IRFB4229 | 165015703 |
| Product Name | 250V 46A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4229 | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | |
| PD | 330000 milliwatts | 330000 milliwatts | |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |