MOSFET N-CH 150V 83A TO220AB
MOSFET N-CH 150V 83A TO220AB Product overview: IRFB4228PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 83A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 83A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4228PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1046816-IRFB4228PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 83A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 4530pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 15 mOhm @ 33A, 10V
Alternative Parts (Cross-Reference): FDP2532; STP90N15F4; IRFB4228;
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
MOSFET N-Channel 150V 83A HEXFET TO220AB
MOSFET N-Channel 150V 83A HEXFET TO220AB
N-Channel 150V 83A (Tc) 330W (Tc) Through Hole TO-220AB
MOSFET Transistor, N Channel, 83 A, 150 V, 0.012 ohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 150V 83A TO220AB
MOSFET MOSFT 150V 83A 15mOhm 72nC
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB4228PBF | 278-IRFB4228PBF | 1046816-IRFB4228PBF | 6886948 | IRFB4228PBF-ND | 83R9937 | IRFB4228PBF | IRFB4228PBF |
| Product Name | Single FETs, MOSFETs | 150V 83A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4228PBF | MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 83 A, 150 V, 0.012 Ohm, 10 V, 3 V Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 150 volts | 150 volts | 150 volts | |||||
| IDSS | 83000 milliamps | |||||||
| PD | 330000 milliwatts | 330 milliwatts | 330000 milliwatts |