Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4212PBF IRFB4212PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069454-IRFB4212PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72.5 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4212PBF - 069454-IRFB4212PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFB4212PBF-ND - DigiKey
    DigiKey
  • MOSFET N-CH 100V 18A TO-220AB - 376-IRFB4212PBF - Utmel Electronic Limited
    Utmel Electronic Limited
  • MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S - 70017254 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB4212PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 069454-IRFB4212PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72.5 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4212PBF - 069454-IRFB4212PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4212PBF
069454-IRFB4212PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4212PBF 069454-IRFB4212PBF
Manufacturer: Infineon Technologies Win Source Part Number: 069454-IRFB4212PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72.5 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069454-IRFB4212PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 550pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 72.5 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFB4212PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB4212PBF-ND
Single FETs, MOSFETs IRFB4212PBF-ND
N-Channel 100V 18A (Tc) 60W (Tc) Through Hole TO-220AB

N-Channel 100V 18A (Tc) 60W (Tc) Through Hole TO-220AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
100V 18A MOSFET Transistor
278-IRFB4212PBF
100V 18A MOSFET Transistor 278-IRFB4212PBF
MOSFET N-CH 100V 18A TO220AB Product overview: IRFB4212PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4212PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 18A TO220AB Product overview: IRFB4212PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4212PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 100V 18A TO-220AB - 376-IRFB4212PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 18A TO-220AB
376-IRFB4212PBF
MOSFET N-CH 100V 18A TO-220AB 376-IRFB4212PBF
MOSFET N-CH 100V 18A TO-220AB

MOSFET N-CH 100V 18A TO-220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S - 70017254 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S
70017254
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S 70017254
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB4212PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB4212PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB4212PBF
MOSFET N-CH 100V 18A TO220AB

MOSFET N-CH 100V 18A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 069454-IRFB4212PBF IRFB4212PBF-ND 278-IRFB4212PBF 376-IRFB4212PBF 70017254 IRFB4212PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4212PBF Single FETs, MOSFETs 100V 18A MOSFET Transistor MOSFET N-CH 100V 18A TO-220AB MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 58Milliohms;ID 18A;TO-220AB;PD 60W;gFS 11S Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 60000 milliwatts 60000 milliwatts 60000 milliwatts 60000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 Tube TO-220 TO-220; TO-220-3
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