Manufacturer: Infineon Technologies
Win Source Part Number: 040708-IRFB41N15DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 41A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2520pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
N-Channel 150V 41A (Tc) 200W (Tc) Through Hole TO-220AB
MOSFET N-CH 150V 41A TO220AB Product overview: IRFB41N15DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 41A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 41A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB41N15DPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 150V 41A TO220AB
MOSFET Transistor, N Channel, 41 A, 150 V, 45 mohm, 10 V, 5.5 V RoHS Compliant: Yes
MOSFET N-CH 150V 41A TO220AB
MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 040708-IRFB41N15DPBF | IRFB41N15DPBF-ND | 278-IRFB41N15DPBF | IRFB41N15DPBF | 38K2489 | IRFB41N15DPBF | IRFB41N15DPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB41N15DPBF | Single FETs, MOSFETs | 150V 41A MOSFET Transistor | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 41 A, 150 V, 45 Mohm, 10 V, 5.5 V Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 150 volts | 150 volts | |||||
| PD | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |