The IRFB4137PBF is an N-channel MOSFET designed for applications such as control FETs for notebook processors, synchronous rectifiers, and power management in graphics cards and telecommunications systems. It features a maximum drain-to-source voltage (VDS) of 30V and a continuous drain current (ID) rating of 13A at a gate-to-source voltage (VGS) of 10V. The device exhibits a low on-resistance (RDS(on)) of 10mOc, which enhances efficiency in power applications. The IRFB4137PBF operates within a temperature range of -55¬8C to +150¬8C and has a maximum power dissipation of 100W at 25¬8C. It is packaged in a compact SO-8 form factor, making it suitable for space-constrained designs. The device is fully characterized for avalanche voltage and current, ensuring reliability in demanding conditions. Additionally, it is lead-free and has been 100% tested for gate resistance, providing assurance of quality and performance. Engineers considering this MOSFET for their projects will find it suitable for high-efficiency applications requiring low on-resistance and robust thermal performance.
MOSFET N-CH 300V 38A TO220
Manufacturer: Infineon Technologies
Win Source Part Number: 1187501-IRFB4137PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 341W
Alternative Parts (Cross-Reference): STP30NM30N; FDP46N30; IXFV52N30P; IRFB4137PbF;
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 300V
Id - Continuous Drain Current: 38A
Rds On (Maximum) at Id, Vgs: 69mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 125nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5168pF at 50V
N-Channel 300V 38A (Tc) 341W (Tc) Through Hole TO-220
MOSFET N-CH 300V 38A TO220 Product overview: IRFB4137PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 38A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 38A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4137PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 300V 38A TO220
MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
MOSFET, N-CH, 300V, 38A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB4137PBF | 1187501-IRFB4137PBF | IRFB4137PBF-ND | 278-IRFB4137PBF | IRFB4137PBF | IRFB4137PBF | 91Y4684 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IRFB4137PBF | Single FETs, MOSFETs | 300V 38A TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 300V, 38A, To-220-3; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 300 volts | 300 volts | 300 volts | ||||
| IDSS | 38000 milliamps | 38000 milliamps | |||||
| PD | 341000 milliwatts | 341000 milliwatts | 341 milliwatts |
