The IRFB4137PBF is an N-channel MOSFET designed for applications such as control FETs for notebook processors, synchronous rectifiers, and power management in graphics cards and telecommunications systems. It features a maximum drain-to-source voltage (VDS) of 30V and a continuous drain current (ID) rating of 13A at a gate-to-source voltage (VGS) of 10V. The device exhibits a low on-resistance (RDS(on)) of 10mOc, which enhances efficiency in power applications. The IRFB4137PBF operates within a temperature range of -55¬8C to +150¬8C and has a maximum power dissipation of 100W at 25¬8C. It is packaged in a compact SO-8 form factor, making it suitable for space-constrained designs. The device is fully characterized for avalanche voltage and current, ensuring reliability in demanding conditions. Additionally, it is lead-free and has been 100% tested for gate resistance, providing assurance of quality and performance. Engineers considering this MOSFET for their projects will find it suitable for high-efficiency applications requiring low on-resistance and robust thermal performance.
N-Channel 300V 38A (Tc) 341W (Tc) Through Hole TO-220
Manufacturer: Infineon Technologies
Win Source Part Number: 1187501-IRFB4137PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 341W
Alternative Parts (Cross-Reference): STP30NM30N; FDP46N30; IXFV52N30P; IRFB4137PbF;
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 300V
Id - Continuous Drain Current: 38A
Rds On (Maximum) at Id, Vgs: 69mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 125nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5168pF at 50V
MOSFET N-CH 300V 38A TO220
MOSFET N-CH 300V 38A TO220
MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
MOSFET, N-CH, 300V, 38A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB4137PBF-ND | 1187501-IRFB4137PBF | IRFB4137PBF | IRFB4137PBF | IRFB4137PBF | 91Y4684 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IRFB4137PBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 300V, 38A, To-220-3; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | |
| V(BR)DSS | 300 volts | 300 volts | ||||
| PD | 341000 milliwatts | 341000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
