Manufacturer: Infineon Technologies
Win Source Part Number: 089103-IRFB4127PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 5380pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 44A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 200V 76A TO220AB Product overview: IRFB4127PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 76A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4127PBF can be used for catalog matching and distributor lookup.
N-Channel 200V 76A (Tc) 375W (Tc) Through Hole TO-220AB
200V 76A 375W 20mΩ@10V,44A 5V@250uA N Channel ITO-220AB-3 MOSFETs ROHS
MOSFET, N-CH, 200V, 76A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:76A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET N-CH 200V 76A TO220AB
IRFB412V-30N-CHANNPO
MOSFET N-CH 200V 76A TO220AB
MOSFET MOSFT 200V 76A 20mOhm 100nC Qg
MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | ODG (Origin Data Global) | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 089103-IRFB4127PBF | 278-IRFB4127PBF | 448-IRFB4127PBF-ND | 2575807P | IRFB4127PBF | 45P3441 | IRFB4127PBF | IRFB4127PBF | IRFB4127PBF | IRFB4127PBF | 70017917 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4127PBF | 200V 76A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 200V, 76A, 175Deg C, 375W; Channel Type Infineon | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | |||||||
| PD | 375000 milliwatts | 375 milliwatts | 375000 milliwatts | 375000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Package Type | TO-220; SOT3; TO-220AB | Tube | TO-220; TO-220-3 | TO-220; TO-220 | TO-220 | TO-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
