MOSFET N-CH 100V 120A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 017573-IRFB4110PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370W (Tc)
Family Name: IRFB4110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 210nC @ 10V
Max Input Capacitance: 9620pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): IRFB4110QPBF; BUK956R1-100E,127; BUK956R1-100E;
Introduction Date: February 21, 2006
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 120A TO220AB Product overview: IRFB4110PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4110PBF can be used for catalog matching and distributor lookup.
MOSFET N-Ch 100V 180A HEXFET TO220AB
MOSFET N-Ch 100V 180A HEXFET TO220AB
N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB
N CHANNEL MOSFET, 100V, 180A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 100V 120A TO220AB
The new IRFB4110 75V MOSFETs are designed to shrink circuit size and increase power density in high power server AC-DC switch-mode power supplies (SMPS) with 12V output or in 48V rail ORing circuits. The new 100V devices suit high power flyback secondary rectification or offer enhanced primary-side efficiency in high power telecom isolated 48V DC-DC converters. In addition, the new MOSFETs can be used in stepper motor and brushless DC motor drive applications.
The IRFB4110PbF is a 100V MOSFET with 4.0mOhm maximum device on-resistance, and can slash component count in half, reducing PCB area and reducing heat sink size.
"Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability"
MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg
100V 120A 4.5mΩ@10V,75A 370W 4V@250uA N Channel TO-220 MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB4110PBF | 017573-IRFB4110PBF | 278-IRFB4110PBF | 495578 | 448-IRFB4110PBF-ND | 73K8209 | IRFB4110PBF | 70017158 | IRFB4110PBF | IRFB4110PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4110PBF | 100V 120A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 3.7 Milliohms;ID 180A;TO-220AB;PD 370W | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | 100 volts | |||||
| IDSS | 120000 milliamps | 180000 milliamps | ||||||||
| PD | 370000 milliwatts | 370000 milliwatts | 370 milliwatts | 370000 milliwatts | 370000 milliwatts |
