Infineon Technologies AG N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type Infineon IRFB4110PBF.

The IRFB4110PbF is a silicon N-channel MOSFET designed for high-efficiency switching applications such as synchronous rectification and hard-switched circuits. It is packaged in a TO-220AB case with a maximum continuous drain current of 180 A at 25°C (silicon-limited) and 120 A (wire-bond-limited), and a drain-to-source breakdown voltage of 100 V. The static drain-to-source on-resistance is specified at 3.7 mΩ maximum at 10 V gate-source voltage and 75 A drain current. The device supports a maximum power dissipation of 370 W and has a junction-to-case thermal resistance of 0.402 °C/W. It features a rugged avalanche capability with a single-pulse avalanche energy rating of 190 mJ. The MOSFET is RoHS compliant and halogen-free. The maximum operating junction temperature is +175 °C and the storage temperature range is from -55 °C to +175 °C.