Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4019PBF IRFB4019PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 083914-IRFB4019PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: IRFB4019 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4.9V @ 50μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 800pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 95 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SUP18N15-95-E3; SUP18N15-95-T1-E3; SUP18N15-95; Introduction Date: March 03, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 083914-IRFB4019PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: IRFB4019 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4.9V @ 50μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 800pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 95 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SUP18N15-95-E3; SUP18N15-95-T1-E3; SUP18N15-95; Introduction Date: March 03, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4019PBF - 083914-IRFB4019PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4019PBF
083914-IRFB4019PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4019PBF 083914-IRFB4019PBF
Manufacturer: Infineon Technologies Win Source Part Number: 083914-IRFB4019PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Family Name: IRFB4019 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 4.9V @ 50μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 800pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 95 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SUP18N15-95-E3; SUP18N15-95-T1-E3; SUP18N15-95; Introduction Date: March 03, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 083914-IRFB4019PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Family Name: IRFB4019
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 4.9V @ 50μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 800pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 95 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SUP18N15-95-E3; SUP18N15-95-T1-E3; SUP18N15-95;
Introduction Date: March 03, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 6886920 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6886920
MOSFETs 6886920
MOSFET N-Channel 150V 17A HEXFET TO220AB

MOSFET N-Channel 150V 17A HEXFET TO220AB

Supplier's Site
MOSFETs - 1458607 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1458607
MOSFETs 1458607
MOSFET N-Channel 150V 17A HEXFET TO220AB

MOSFET N-Channel 150V 17A HEXFET TO220AB

Supplier's Site
Single FETs, MOSFETs - IRFB4019PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB4019PBF-ND
Single FETs, MOSFETs IRFB4019PBF-ND
N-Channel 150V 17A (Tc) 80W (Tc) Through Hole TO-220AB

N-Channel 150V 17A (Tc) 80W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
150V 17A MOSFET Transistor
278-IRFB4019PBF
150V 17A MOSFET Transistor 278-IRFB4019PBF
MOSFET N-CH 150V 17A TO220AB Product overview: IRFB4019PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4019PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 17A TO220AB Product overview: IRFB4019PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4019PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB4019PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB4019PBF
Single FETs, MOSFETs IRFB4019PBF
MOSFET N-CH 150V 17A TO220AB

MOSFET N-CH 150V 17A TO220AB

Supplier's Site Datasheet
Mosfet, N-Ch, 17A, 150V, To-220Ab-3; Transistor Polarity Infineon - 32AC7461 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 17A, 150V, To-220Ab-3; Transistor Polarity Infineon
32AC7461
Mosfet, N-Ch, 17A, 150V, To-220Ab-3; Transistor Polarity Infineon 32AC7461
MOSFET, N-CH, 17A, 150V, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power RoHS Compliant: Yes

MOSFET, N-CH, 17A, 150V, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB4019PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB4019PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB4019PBF
MOSFET N-CH 150V 17A TO220AB

MOSFET N-CH 150V 17A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 150V 17A 95mOhm 13nC Qg

MOSFET MOSFT 150V 17A 95mOhm 13nC Qg

Buy Now Datasheet
Transistor - 108050149 - Radwell International
Willingboro, NJ, United States
Transistor
108050149
Transistor 108050149
MOSFET, N-CH, 17A, 150V, TO-220AB-3, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:17A, DRAIN SOURCE VOLTAGE VDS:150V, ON RESISTANCE RDS(ON):0.08OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4.9V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 17A, 150V, TO-220AB-3, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:17A, DRAIN SOURCE VOLTAGE VDS:150V, ON RESISTANCE RDS(ON):0.08OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4.9V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 083914-IRFB4019PBF 6886920 IRFB4019PBF-ND 278-IRFB4019PBF IRFB4019PBF 32AC7461 IRFB4019PBF IRFB4019PBF 108050149
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4019PBF MOSFETs Single FETs, MOSFETs 150V 17A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 17A, 150V, To-220Ab-3; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 150 volts 150 volts 150 volts
PD 80000 milliwatts 80 milliwatts 80000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; To-220ab TO-220; TO-220-3 Tube TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
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