MOSFET N-CH 200V 43A TO220AB Product overview: IRFB38N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 43A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 43A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB38N20DPBF can be used for catalog matching and distributor lookup.
N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069451-IRFB38N20DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Family Name: IRFB38N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 43A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 91nC @ 10V
Max Input Capacitance: 2900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 54 mOhm @ 26A, 10V
Alternative Parts (Cross-Reference): SUP33N20-60P; SUP33N20-60P-E3; SUP52N20-39P; SUP36N20-54P-E3;
Introduction Date: August 11, 2004
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
HEXFET N-Ch MOSFET 38A 200V TO-220AB
HEXFET N-Ch MOSFET 38A 200V TO-220AB
MOSFET MOSFT 200V 44A 54mOhm 60nC
200V 43A 54mΩ@10V,26A 5V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET N-CH 200V 43A TO220AB
IRFB38N20 - 12V-300V N-CHANNEL P
POWER FIELD-EFFECT TRANSISTOR, 43A I(D), 200V, 0.054OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 200V, 43A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:43A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;TO-220AB;PD 300W;VGS +/-30V
MOSFET N-CH 200V 43A TO220AB
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Radwell International | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFB38N20DPBF | IRFB38N20DPBF-ND | 069451-IRFB38N20DPBF | 8273944 | 8273944P | IRFB38N20DPBF | IRFB38N20DPBF | IRFB38N20DPBF | 66771414 | 38K2488 | 70017523 | IRFB38N20DPBF |
| Product Name | 200V 43A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB38N20DPBF | MOSFETs | MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Transistor | Mosfet, N-Ch, 200V, 43A, To-220Ab; Channel Type Infineon | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;TO-220AB;PD 300W;VGS +/-30V | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | 200 volts | |||||||
| Transconductance | 0.0170 kS | 0.0170 kS | ||||||||||
| PD | 3.8 milliwatts | 3800 to 300000 milliwatts | 3800 milliwatts | 3800 milliwatts | 300000 milliwatts |
