Manufacturer: Infineon Technologies
Win Source Part Number: 092983-IRFB3806PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 71W (Tc)
Family Name: IRFB3806
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 43A (Tc)
Gate-Source Threshold Voltage: 4V @ 50μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1150pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15.8 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): NDP7061-Q; AOT462; STP55NE06; HAF2014-E;
Introduction Date: February 29, 2008
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 43A TO220AB Product overview: IRFB3806PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 43A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 43A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3806PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 43A TO220AB
N-Channel 60V 43A (Tc) 71W (Tc) Through Hole TO-220AB
MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg
MOSFET N-CH 60V 43A TO220AB
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 43A, 60V, 0.0158OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 092983-IRFB3806PBF | 278-IRFB3806PBF | IRFB3806PBF | IRFB3806PBF-ND | IRFB3806PBF | IRFB3806PBF | 17416636 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3806PBF | 60V 43A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 71000 milliwatts | 71 milliwatts | 71000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-220; SOT3; TO-220AB | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |