Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3806PBF IRFB3806PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 092983-IRFB3806PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 71W (Tc) Family Name: IRFB3806 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 43A (Tc) Gate-Source Threshold Voltage: 4V @ 50μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 1150pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15.8 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): NDP7061-Q; AOT462; STP55NE06; HAF2014-E; Introduction Date: February 29, 2008 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 092983-IRFB3806PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 71W (Tc) Family Name: IRFB3806 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 43A (Tc) Gate-Source Threshold Voltage: 4V @ 50μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 1150pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15.8 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): NDP7061-Q; AOT462; STP55NE06; HAF2014-E; Introduction Date: February 29, 2008 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3806PBF - 092983-IRFB3806PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3806PBF
092983-IRFB3806PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3806PBF 092983-IRFB3806PBF
Manufacturer: Infineon Technologies Win Source Part Number: 092983-IRFB3806PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 71W (Tc) Family Name: IRFB3806 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 43A (Tc) Gate-Source Threshold Voltage: 4V @ 50μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 1150pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15.8 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): NDP7061-Q; AOT462; STP55NE06; HAF2014-E; Introduction Date: February 29, 2008 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 092983-IRFB3806PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 71W (Tc)
Family Name: IRFB3806
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 43A (Tc)
Gate-Source Threshold Voltage: 4V @ 50μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1150pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15.8 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): NDP7061-Q; AOT462; STP55NE06; HAF2014-E;
Introduction Date: February 29, 2008
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
60V 43A MOSFET Transistor
278-IRFB3806PBF
60V 43A MOSFET Transistor 278-IRFB3806PBF
MOSFET N-CH 60V 43A TO220AB Product overview: IRFB3806PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 43A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 43A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3806PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 43A TO220AB Product overview: IRFB3806PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 43A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 43A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3806PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB3806PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB3806PBF
Single FETs, MOSFETs IRFB3806PBF
MOSFET N-CH 60V 43A TO220AB

MOSFET N-CH 60V 43A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB3806PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB3806PBF-ND
Single FETs, MOSFETs IRFB3806PBF-ND
N-Channel 60V 43A (Tc) 71W (Tc) Through Hole TO-220AB

N-Channel 60V 43A (Tc) 71W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg

MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB3806PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB3806PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB3806PBF
MOSFET N-CH 60V 43A TO220AB

MOSFET N-CH 60V 43A TO220AB

Supplier's Site
Transistor - 17416636 - Radwell International
Willingboro, NJ, United States
Transistor
17416636
Transistor 17416636
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 43A, 60V, 0.0158OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 43A, 60V, 0.0158OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 092983-IRFB3806PBF 278-IRFB3806PBF IRFB3806PBF IRFB3806PBF-ND IRFB3806PBF IRFB3806PBF 17416636
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3806PBF 60V 43A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 71000 milliwatts 71 milliwatts 71000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB Tube TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3
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