Infineon Technologies AG Single FETs, MOSFETs IRFB3507

N-Channel 75V 97A (Tc) 190W (Tc) Through Hole TO-220AB

Manufacturer: Infineon Technologies
Win Source Part Number: 128795-IRFB3507
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 97A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 3540pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.8 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

MOSFET N-CH 75V 97A TO220AB Product overview: IRFB3507 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 97A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 97A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3507 can be used for catalog matching and distributor lookup.