Manufacturer: Infineon Technologies
Win Source Part Number: 069448-IRFB3307PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 5150pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.3 mOhm @ 75A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
MOSFET N-CH 75V 130A TO220AB Product overview: IRFB3307PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3307PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 75V 130A TO220AB
N-Channel 75V 130A (Tc) 200W (Tc) Through Hole TO-220AB
MOSFET MOSFT 75V 130A 6.3mOhm 120nC
MOSFET, N-CH, 120A, 75V, TO-220AB-3, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:120A, DRAIN SOURCE VOLTAGE VDS:75V, ON RESISTANCE RDS(ON):0.005OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4V, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 75V 130A TO220AB
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 069448-IRFB3307PBF | 278-IRFB3307PBF | 2575799P | IRFB3307PBF | 448-IRFB3307PBF-ND | IRFB3307PBF | 108056685 | IRFB3307PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3307PBF | 75V 130A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | |||||
| PD | 200000 milliwatts | 250 milliwatts | 200000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-220; SOT3; TO-220AB | Tube | TO-263; TO-263 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
