Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3207ZGPBF IRFB3207ZGPBF

Manufacturer: Infineon Technologies Win Source Part Number: 1046809-IRFB3207ZGPB F Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 6920pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.1 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited