N-Channel 75V 170A (Tc) 330W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 090154-IRFB3207PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 170A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 7600pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 75A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 75V 170A TO220AB Product overview: IRFB3207PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 170A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 170A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3207PBF can be used for catalog matching and distributor lookup.
Power MOSFET, Pulsed Drain Current 720 A, Input Capacitance 7600 pF
75V 170A 330W 4.5mΩ@10V,75A 4V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET N-CH 75V 170A TO220AB
MOSFET MOSFT 75V 180A 4.5mOhm 180nC
MOSFET N-CH 75V 170A TO220AB
N CHANNEL MOSFET, 75V, 180A, TO-220AB; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:180A; DRAIN SOURCE VOLTAGE VDS:75V; ON RESISTANCE RD. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 75V, 180A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| RS Components, Ltd. | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2579343 | IRFB3207PBF-ND | 090154-IRFB3207PBF | 278-IRFB3207PBF | 70016923 | IRFB3207PBF | IRFB3207PBF | IRFB3207PBF | IRFB3207PBF | 17617165 | 31K1926 |
| Product Name | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3207PBF | 75V 170A MOSFET Transistor | MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.6Milliohms;ID 180A;TO-220AB;PD 330W;-55de | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Transistor | N Channel Mosfet, 75V, 180A, To-220Ab; Channel Type Infineon |
| Package Type | TO-220; TO-220 | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | Tube | TO-220 | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | 75 volts | 75 volts | ||||||
| PD | 330000 milliwatts | 330 milliwatts | 330000 milliwatts | 330000 milliwatts | 330000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |