MOSFET N-CH 60V 120A TO220AB Product overview: IRFB3206PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3206PBF can be used for catalog matching and distributor lookup.
N-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-220AB
MOSFET N-Channel 60V 210A HEXFET TO220AB
MOSFET N-Channel 60V 210A HEXFET TO220AB
MOSFET N-CH 60V 120A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 091068-IRFB3206PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: IRFB3206
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 6540pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): BUK753R5-60E; TK100E06N1,S1X; AOT262L; TK100E06N1,S1X(S;
Introduction Date: June 05, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 60V 120A TO220AB
MOSFET MOSFT 60V 210A 3mOhm 120nC Qg
60V 120A 300W 3mΩ@10V,75A 4V@150uA N Channel TO-220AB MOSFETs ROHS
MOSFET Transistor, N Channel, 210 A, 60 V, 3 mohm, 10 V, 4 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFB3206PBF | 448-IRFB3206PBF-ND | 495574 | IRFB3206PBF | 091068-IRFB3206PBF | IRFB3206PBF | IRFB3206PBF | IRFB3206PBF | 61M6826 |
| Product Name | 60V 120A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3206PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet Transistor, N Channel, 210 A, 60 V, 3 Mohm, 10 V, 4 V Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||||
| PD | 300 milliwatts | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
