Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3077PBF IRFB3077PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 089705-IRFB3077PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Family Name: IRFB3077 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 9400pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): AP97T07AGP-HF; STP210N75F6; FDP032N08; Introduction Date: February 08, 2006 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 089705-IRFB3077PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Family Name: IRFB3077 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 9400pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): AP97T07AGP-HF; STP210N75F6; FDP032N08; Introduction Date: February 08, 2006 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3077PBF - 089705-IRFB3077PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3077PBF
089705-IRFB3077PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3077PBF 089705-IRFB3077PBF
Manufacturer: Infineon Technologies Win Source Part Number: 089705-IRFB3077PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Family Name: IRFB3077 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 9400pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): AP97T07AGP-HF; STP210N75F6; FDP032N08; Introduction Date: February 08, 2006 ECCN: EAR99 Country of Origin: China, Mexico, Republic of Korea Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 089705-IRFB3077PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370W (Tc)
Family Name: IRFB3077
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 9400pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): AP97T07AGP-HF; STP210N75F6; FDP032N08;
Introduction Date: February 08, 2006
ECCN: EAR99
Country of Origin: China, Mexico, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRFB3077PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB3077PBF-ND
Single FETs, MOSFETs IRFB3077PBF-ND
N-Channel 75V 120A (Tc) 370W (Tc) Through Hole TO-220AB

N-Channel 75V 120A (Tc) 370W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 6504716 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6504716
MOSFETs 6504716
MOSFET N-Channel 75V 210A HEXFET TO220AB

MOSFET N-Channel 75V 210A HEXFET TO220AB

Supplier's Site
MOSFETs - 6504716P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6504716P
MOSFETs 6504716P
MOSFET N-Channel 75V 210A HEXFET TO220AB

MOSFET N-Channel 75V 210A HEXFET TO220AB

Supplier's Site
MOSFETs - 9133960 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9133960
MOSFETs 9133960
MOSFET N-Channel 75V 210A HEXFET TO220AB

MOSFET N-Channel 75V 210A HEXFET TO220AB

Supplier's Site
Singapore
75V 120A MOSFET Transistor
278-IRFB3077PBF
75V 120A MOSFET Transistor 278-IRFB3077PBF
MOSFET N-CH 75V 120A TO220AB Product overview: IRFB3077PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3077PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 75V 120A TO220AB Product overview: IRFB3077PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3077PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 75V, 210A, 175Deg C, 370W; Channel Type Infineon - 25M9790 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 75V, 210A, 175Deg C, 370W; Channel Type Infineon
25M9790
Mosfet, N-Ch, 75V, 210A, 175Deg C, 370W; Channel Type Infineon 25M9790
MOSFET, N-CH, 75V, 210A, 175DEG C, 370W; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:210A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 75V, 210A, 175DEG C, 370W; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:210A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 75V 210A 3.3mOhm 160nC Qg

MOSFET MOSFT 75V 210A 3.3mOhm 160nC Qg

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de - 70017159 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de
70017159
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de 70017159
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRFB3077PBF
Triode/MOS Tube/Transistor >> MOSFETs IRFB3077PBF
75V 120A 3.3mΩ@10V,75A 370W 4V@250uA N Channel TO-220AB MOSFETs ROHS

75V 120A 3.3mΩ@10V,75A 370W 4V@250uA N Channel TO-220AB MOSFETs ROHS

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB3077PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB3077PBF
Single FETs, MOSFETs IRFB3077PBF
MOSFET N-CH 75V 120A TO220AB

MOSFET N-CH 75V 120A TO220AB

Supplier's Site Datasheet
Transistor - 66771374 - Radwell International
Willingboro, NJ, United States
Transistor
66771374
Transistor 66771374
POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 75V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 75V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB3077PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB3077PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB3077PBF
MOSFET N-CH 75V 120A TO220AB

MOSFET N-CH 75V 120A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Allied Electronics, Inc. LCSC Electronics Technology (HK) Limited ODG (Origin Data Global) Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 089705-IRFB3077PBF IRFB3077PBF-ND 6504716 6504716P 278-IRFB3077PBF 25M9790 IRFB3077PBF 70017159 IRFB3077PBF IRFB3077PBF 66771374 IRFB3077PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3077PBF Single FETs, MOSFETs MOSFETs MOSFETs 75V 120A MOSFET Transistor Mosfet, N-Ch, 75V, 210A, 175Deg C, 370W; Channel Type Infineon MOSFET MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de Triode/MOS Tube/Transistor >> MOSFETs Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 75 volts 75 volts 75 volts 75 volts 75 volts
PD 370000 milliwatts 370 milliwatts 370000 milliwatts 370000 milliwatts 370000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; To-220ab TO-220; TO-220 Tube TO-3 TO-220 TO-220 TO-220; TO-220-3 TO-220; TO-220-3
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