Manufacturer: Infineon Technologies
Win Source Part Number: 089705-IRFB3077PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370W (Tc)
Family Name: IRFB3077
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 9400pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): AP97T07AGP-HF; STP210N75F6; FDP032N08;
Introduction Date: February 08, 2006
ECCN: EAR99
Country of Origin: China, Mexico, Republic of Korea
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management
N-Channel 75V 120A (Tc) 370W (Tc) Through Hole TO-220AB
MOSFET N-Channel 75V 210A HEXFET TO220AB
MOSFET N-Channel 75V 210A HEXFET TO220AB
MOSFET N-Channel 75V 210A HEXFET TO220AB
MOSFET N-CH 75V 120A TO220AB Product overview: IRFB3077PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3077PBF can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 75V, 210A, 175DEG C, 370W; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:210A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET MOSFT 75V 210A 3.3mOhm 160nC Qg
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de
75V 120A 3.3mΩ@10V,75A 370W 4V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET N-CH 75V 120A TO220AB
POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 75V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 75V 120A TO220AB
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 089705-IRFB3077PBF | IRFB3077PBF-ND | 6504716 | 6504716P | 278-IRFB3077PBF | 25M9790 | IRFB3077PBF | 70017159 | IRFB3077PBF | IRFB3077PBF | 66771374 | IRFB3077PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3077PBF | Single FETs, MOSFETs | MOSFETs | MOSFETs | 75V 120A MOSFET Transistor | Mosfet, N-Ch, 75V, 210A, 175Deg C, 370W; Channel Type Infineon | MOSFET | MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | 75 volts | 75 volts | |||||||
| PD | 370000 milliwatts | 370 milliwatts | 370000 milliwatts | 370000 milliwatts | 370000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220 | Tube | TO-3 | TO-220 | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 |
