Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3006GPBF IRFB3006GPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046808-IRFB3006GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 195A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 8970pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 170A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3006GPBF - 1046808-IRFB3006GPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFB3006GPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB3006GPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET, 60V, 270A, 2.5 MOHM, 200 NC QG,TO220AB, HALOGEN-FREE - 70019214 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046808-IRFB3006GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 195A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 8970pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 170A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3006GPBF - 1046808-IRFB3006GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3006GPBF
1046808-IRFB3006GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3006GPBF 1046808-IRFB3006GPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046808-IRFB3006GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 375W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 195A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 8970pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.5 mOhm @ 170A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1046808-IRFB3006GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 8970pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 170A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 195A MOSFET Transistor
278-IRFB3006GPBF
60V 195A MOSFET Transistor 278-IRFB3006GPBF
MOSFET N-CH 60V 195A TO220AB Product overview: IRFB3006GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3006GPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 195A TO220AB Product overview: IRFB3006GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3006GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB3006GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB3006GPBF-ND
Single FETs, MOSFETs IRFB3006GPBF-ND
N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB

N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB3006GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB3006GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB3006GPBF
MOSFET N-CH 60V 195A TO220AB

MOSFET N-CH 60V 195A TO220AB

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFB3006GPBF
MOSFET IRFB3006GPBF
MOSFET MOSFT 60V 270A 2.5mOhm 200nCAB

MOSFET MOSFT 60V 270A 2.5mOhm 200nCAB

Buy Now Datasheet
MOSFET, 60V, 270A, 2.5 MOHM, 200 NC QG,TO220AB, HALOGEN-FREE - 70019214 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, 60V, 270A, 2.5 MOHM, 200 NC QG,TO220AB, HALOGEN-FREE
70019214
MOSFET, 60V, 270A, 2.5 MOHM, 200 NC QG,TO220AB, HALOGEN-FREE 70019214
International Rectifier’s High Speed Power Switch provides a package current rating of up to 195 A, delivering a 60 percent improvement over typical package current ratings. These MOSFETs also provide improved on-state resistance compared to previous offerings and are available in the popular TO-220, D2PAK and TO-262 packages. Moreover, the 7-pin D2PAK achieves a superior package current rating of 240 A making it one of the most rugged surface mount packages available. Applications: High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced Body Diode dV/dt and dI/dt Capability Lead-Free Halogen-Free

International Rectifier’s High Speed Power Switch provides a package current rating of up to 195 A, delivering a 60 percent improvement over typical package current ratings. These MOSFETs also provide improved on-state resistance compared to previous offerings and are available in the popular TO-220, D2PAK and TO-262 packages. Moreover, the 7-pin D2PAK achieves a superior package current rating of 240 A making it one of the most rugged surface mount packages available.
Applications:

  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits
    Benefits:
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced Body Diode dV/dt and dI/dt Capability
  • Lead-Free
  • Halogen-Free
Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046808-IRFB3006GPBF 278-IRFB3006GPBF IRFB3006GPBF-ND IRFB3006GPBF IRFB3006GPBF 70019214
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3006GPBF 60V 195A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET, 60V, 270A, 2.5 MOHM, 200 NC QG,TO220AB, HALOGEN-FREE
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 375000 milliwatts 375 milliwatts 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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