Manufacturer: Infineon Technologies
Win Source Part Number: 1046808-IRFB3006GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 375W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 8970pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 170A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB
MOSFET N-CH 60V 195A TO220AB Product overview: IRFB3006GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB3006GPBF can be used for catalog matching and distributor lookup.
International Rectifier’s High Speed Power Switch provides a package current rating of up to 195 A, delivering a 60 percent improvement over typical package current ratings. These MOSFETs also provide improved on-state resistance compared to previous offerings and are available in the popular TO-220, D2PAK and TO-262 packages. Moreover, the 7-pin D2PAK achieves a superior package current rating of 240 A making it one of the most rugged surface mount packages available.
Applications:
MOSFET MOSFT 60V 270A 2.5mOhm 200nCAB
MOSFET N-CH 60V 195A TO220AB
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1046808-IRFB3006GPBF | IRFB3006GPBF-ND | 278-IRFB3006GPBF | 70019214 | IRFB3006GPBF | IRFB3006GPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB3006GPBF | Single FETs, MOSFETs | 60V 195A MOSFET Transistor | MOSFET, 60V, 270A, 2.5 MOHM, 200 NC QG,TO220AB, HALOGEN-FREE | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 375000 milliwatts | 375 milliwatts | 375000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
