N-Channel 200V 56A (Tc) 380W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 56A TO220AB Product overview: IRFB260NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 56A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 56A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB260NPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 090152-IRFB260NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 380W (Tc)
Family Name: IRFB260
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 4220pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 34A, 10V
Alternative Parts (Cross-Reference): IXTP60N20T; STP75N20; STP75NF20; PSMN057-200P,127;
Introduction Date: July 08, 2004
ECCN: EAR99
Country of Origin: China, Malaysia, Mexico, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 200V, 56A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 200V 56A TO220AB
MOSFET MOSFT 200V 56A 40mOhm 150nC
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 56A;TO-220AB;PD 380W;VGS +/-20V
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB260NPBF-ND | 278-IRFB260NPBF | 090152-IRFB260NPBF | 2626745 | 63J6714 | IRFB260NPBF | IRFB260NPBF | 70017423 |
| Product Name | Single FETs, MOSFETs | 200V 56A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB260NPBF | MOSFETs | N Channel Mosfet, 200V, 56A, To-220Ab; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 56A;TO-220AB;PD 380W;VGS +/-20V |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | Tube | TO-220; SOT3; TO-220AB | TO-220; TO-220 | TO-3; TO-220 | TO-220; TO-220-3 | TO-220 | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||
| Transconductance | 0.0290 kS | 0.0290 kS |
