Manufacturer: Infineon Technologies
Win Source Part Number: 017571-IRFB23N20DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Family Name: IRFB23N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 100 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): SSP45N20B; FQP32N20C-F080 ; FQP34N20-NL; FDP2670;
Introduction Date: July 21, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2021
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 24A TO220AB Product overview: IRFB23N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB23N20DPBF can be used for catalog matching and distributor lookup.
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| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 017571-IRFB23N20DPBF | IRFB23N20DPBF-ND | 278-IRFB23N20DPBF | IRFB23N20DPBF | IRFB23N20DPBF | 70017019 | 376-IRFB23N20DPBF | IRFB23N20DPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB23N20DPBF | Single FETs, MOSFETs | 200V 24A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.1Ohm;ID 24A;TO-220AB;PD 170W;VGS +/-30V | MOSFET N-CH 200V 24A TO-220AB | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | ||||
| PD | 3800 to 170000 milliwatts | 3800 milliwatts | 3800 milliwatts | 170000 milliwatts | 170000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | Tube | TO-220; TO-220-3 | TO-220 | TO-220; TO-220-3 |
