Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRRPBF IRF9Z34NSTRRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069442-IRF9Z34NSTRRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069442-IRF9Z34NSTRRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRRPBF - 069442-IRF9Z34NSTRRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRRPBF
069442-IRF9Z34NSTRRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRRPBF 069442-IRF9Z34NSTRRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 069442-IRF9Z34NSTRRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 069442-IRF9Z34NSTRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 448-IRF9Z34NSTRRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IRF9Z34NSTRRPBFTR-ND
Single FETs, MOSFETs 448-IRF9Z34NSTRRPBFTR-ND
P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Singapore, Singapore
55V 19A MOSFET Transistor
278-IRF9Z34NSTRRPBF
55V 19A MOSFET Transistor 278-IRF9Z34NSTRRPBF
MOSFET P-CH 55V 19A D2PAK Product overview: IRF9Z34NSTRRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z34NSTRRPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 55V 19A D2PAK Product overview: IRF9Z34NSTRRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z34NSTRRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC

MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z34NSTRRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z34NSTRRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z34NSTRRPBF
MOSFET P-CH 55V 19A D2PAK

MOSFET P-CH 55V 19A D2PAK

Supplier's Site
Single FETs, MOSFETs - IRF9Z34NSTRRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF9Z34NSTRRPBF
Single FETs, MOSFETs IRF9Z34NSTRRPBF
MOSFET P-CH 55V 19A D2PAK

MOSFET P-CH 55V 19A D2PAK

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069442-IRF9Z34NSTRRPBF 448-IRF9Z34NSTRRPBFTR-ND 278-IRF9Z34NSTRRPBF IRF9Z34NSTRRPBF IRF9Z34NSTRRPBF IRF9Z34NSTRRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRRPBF Single FETs, MOSFETs 55V 19A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 55 volts 55 volts 55 volts
PD 3800 to 68000 milliwatts 68 milliwatts 3800 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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