Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRLPBF IRF9Z34NSTRLPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 015802-IRF9Z34NSTRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Family Name: IRF9Z34NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IRF9Z34S; IRF9Z34STRRPBF; IRF9Z34SPBF; IRF9Z34STRL; Introduction Date: August 25, 1997 ECCN: EAR99 Country of Origin: Republic of Korea, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 015802-IRF9Z34NSTRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Family Name: IRF9Z34NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IRF9Z34S; IRF9Z34STRRPBF; IRF9Z34SPBF; IRF9Z34STRL; Introduction Date: August 25, 1997 ECCN: EAR99 Country of Origin: Republic of Korea, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRLPBF - 015802-IRF9Z34NSTRLPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRLPBF
015802-IRF9Z34NSTRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRLPBF 015802-IRF9Z34NSTRLPBF
Manufacturer: Infineon Technologies Win Source Part Number: 015802-IRF9Z34NSTRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Family Name: IRF9Z34NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IRF9Z34S; IRF9Z34STRRPBF; IRF9Z34SPBF; IRF9Z34STRL; Introduction Date: August 25, 1997 ECCN: EAR99 Country of Origin: Republic of Korea, Mexico Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 015802-IRF9Z34NSTRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Family Name: IRF9Z34NS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IRF9Z34S; IRF9Z34STRRPBF; IRF9Z34SPBF; IRF9Z34STRL;
Introduction Date: August 25, 1997
ECCN: EAR99
Country of Origin: Republic of Korea, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
55V 19A MOSFET Transistor
278-IRF9Z34NSTRLPBF
55V 19A MOSFET Transistor 278-IRF9Z34NSTRLPBF
MOSFET P-CH 55V 19A D2PAK Product overview: IRF9Z34NSTRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z34NSTRLPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 55V 19A D2PAK Product overview: IRF9Z34NSTRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z34NSTRLPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF9Z34NSTRLPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF9Z34NSTRLPBF
Single FETs, MOSFETs IRF9Z34NSTRLPBF
MOSFET P-CH 55V 19A D2PAK

MOSFET P-CH 55V 19A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF9Z34NSTRLPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z34NSTRLPBFCT-ND
Single FETs, MOSFETs IRF9Z34NSTRLPBFCT-ND
P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - IRF9Z34NSTRLPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z34NSTRLPBFDKR-ND
Single FETs, MOSFETs IRF9Z34NSTRLPBFDKR-ND
P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - IRF9Z34NSTRLPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z34NSTRLPBFTR-ND
Single FETs, MOSFETs IRF9Z34NSTRLPBFTR-ND
P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Buy Now Datasheet
MOSFETs - 2626744 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626744
MOSFETs 2626744
Infineon MOSFET IRF9Z34NSTRLPBF

Infineon MOSFET IRF9Z34NSTRLPBF

Supplier's Site
MOSFETs - 2626743 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626743
MOSFETs 2626743
Infineon MOSFET IRF9Z34NSTRLPBF

Infineon MOSFET IRF9Z34NSTRLPBF

Supplier's Site
MOSFETs - 2626744P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2626744P
MOSFETs 2626744P
Infineon MOSFET IRF9Z34NSTRLPBF

Infineon MOSFET IRF9Z34NSTRLPBF

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IRF9Z34NSTRLPBF
Triode/MOS Tube/Transistor >> MOSFETs IRF9Z34NSTRLPBF
55V 19A 100mΩ@10V,10A 4V@250uA P Channel TO-263-2 MOSFETs ROHS

55V 19A 100mΩ@10V,10A 4V@250uA P Channel TO-263-2 MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC

MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z34NSTRLPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z34NSTRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z34NSTRLPBF
MOSFET P-CH 55V 19A D2PAK

MOSFET P-CH 55V 19A D2PAK

Supplier's Site
Mosfet, P-Ch, -55V, -19A, To-263; Transistor Polarity Infineon - 13AC9219 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -55V, -19A, To-263; Transistor Polarity Infineon
13AC9219
Mosfet, P-Ch, -55V, -19A, To-263; Transistor Polarity Infineon 13AC9219
MOSFET, P-CH, -55V, -19A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-19A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

MOSFET, P-CH, -55V, -19A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-19A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey RS Components, Ltd. LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015802-IRF9Z34NSTRLPBF 278-IRF9Z34NSTRLPBF IRF9Z34NSTRLPBF IRF9Z34NSTRLPBFCT-ND 2626744 IRF9Z34NSTRLPBF IRF9Z34NSTRLPBF IRF9Z34NSTRLPBF 13AC9219
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSTRLPBF 55V 19A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -55V, -19A, To-263; Transistor Polarity Infineon
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 55 volts 55 volts 55 volts 55 volts
PD 3800 to 68000 milliwatts 68 milliwatts 3800 milliwatts 3800 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK Tape & Reel (TR) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263 TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263; TO-252 (DPAK)
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