Infineon Technologies AG Single FETs, MOSFETs IRF9Z34NSPBF

Description
P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
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Description
P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRF9Z34NSPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF9Z34NSPBF-ND
Single FETs, MOSFETs IRF9Z34NSPBF-ND
P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Singapore
55V 19A MOSFET Transistor
278-IRF9Z34NSPBF
55V 19A MOSFET Transistor 278-IRF9Z34NSPBF
MOSFET P-CH 55V 19A D2PAK Product overview: IRF9Z34NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z34NSPBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 55V 19A D2PAK Product overview: IRF9Z34NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z34NSPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSPBF - 1046802-IRF9Z34NSPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSPBF
1046802-IRF9Z34NSPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSPBF 1046802-IRF9Z34NSPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046802-IRF9Z34NSPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046802-IRF9Z34NSPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF9Z34NSPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF9Z34NSPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF9Z34NSPBF
MOSFET P-CH 55V 19A D2PAK

MOSFET P-CH 55V 19A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRF9Z34NSPBF-ND 278-IRF9Z34NSPBF 1046802-IRF9Z34NSPBF IRF9Z34NSPBF
Product Name Single FETs, MOSFETs 55V 19A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NSPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 3800 milliwatts 3800 to 68000 milliwatts
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