Manufacturer: Infineon Technologies
Win Source Part Number: 113420-IRF9956TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.5A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 190pF @ 15V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 3.5A 8SO Product overview: IRF9956TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF9956TRPBF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 2W Surface Mount 8-SO
MOSFET 2N-CH 30V 3.5A 8-SOIC
MOSFET, DUAL N-CH, 30V, 3.5A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
MOSFET 2N-CH 30V 3.5A 8-SOIC
MOSFET 2N-CH 30V 3.5A 8SO
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 113420-IRF9956TRPBF | 289-IRF9956TRPBF | IRF9956PBFCT-ND | 376-IRF9956TRPBF | 43AC3296 | IRF9956TRPBF | IRF9956TRPBF | IRF9956TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9956TRPBF | 30V 3.5A MOSFET Transistor | FET, MOSFET Arrays | MOSFET 2N-CH 30V 3.5A 8-SOIC | Mosfet, Dual N-Ch, 30V, 3.5A, Soic-8; Transistor Polarity Infineon | MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| PD | 2000 milliwatts | 2 milliwatts | 2000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | Tape & Reel (TR) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | 8-SOIC (0.154", 3.90mm Width) |
