Mosfet Array 2 N-Channel (Dual) 20V 10A, 12A 2W Surface Mount 8-SO
MOSFET 2N-CH 20V 10A/12A 8-SOIC Product overview: IRF9910TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10A, 12A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10A, 12A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF9910TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017563-IRF9910TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10A, 12A
Gate-Source Threshold Voltage: 2.55V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 900pF @ 10V
Maximum Rds On at Id,Vgs: 9.3 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(on):0.0183ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; No. of Pins:8PinsRoHS Compliant: Yes
MOSFET 2N-CH 20V 10A/12A 8-SOIC
MOSFET 2N-CH 20V 10A/12A 8-SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9910PBFTR-ND | 289-IRF9910TRPBF | 017563-IRF9910TRPBF | IRF9910TRPBF | 40M7982 | IRF9910TRPBF | IRF9910TRPBF |
| Product Name | FET, MOSFET Arrays | 20V 10A 12A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9910TRPBF | MOSFET | N Channel Mosfet, 20V, 10A; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | SOT3; 8-SO | TO-3 | 8-SOIC (0.154", 3.90mm Width) | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 2000 milliwatts | 2000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
