Manufacturer: Infineon Technologies
Win Source Part Number: 069431-IRF9530NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 79W (Tc)
Family Name: IRF9530
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 760pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 8.4A, 10V
Alternative Parts (Cross-Reference): TSM22P10CZ C0G; NTE2371; IRF9540-PDD; 2SJ221;
Introduction Date: February 04, 2004
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
P-Channel 100V 14A (Tc) 79W (Tc) Through Hole TO-220AB
IRF920V-25P-CHANNPOW
MOSFET P-CH 100V 14A TO220AB
MOSFET P-CH 100V 14A TO220AB Product overview: IRF9530NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9530NPBF can be used for catalog matching and distributor lookup.
P CHANNEL MOSFET, -100V, 14A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
100V 14A 79W 200mΩ@10V,8.4A 4V@250uA P Channel TO-220AB MOSFETs ROHS
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 100V, 0.2OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 100V, 0.2OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC
MOSFET P-CH 100V 14A TO220AB
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Allied Electronics, Inc. | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 069431-IRF9530NPBF | IRF9530NPBF-ND | IRF9530NPBF | IRF9530NPBF | 5410828 | 278-IRF9530NPBF | 63J7429 | IRF9530NPBF | 70017011 | 66771286 | IRF9530NPBF | IRF9530NPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9530NPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | 100V 14A MOSFET Transistor | P Channel Mosfet, -100V, 14A, To-220Ab; Channel Type Infineon | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | -100 volts | |||||||
| PD | 79000 milliwatts | 79000 milliwatts | 79 milliwatts | 79000 milliwatts | 79000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; To-220ab | Tube | TO-3; TO-220 | TO-220 | TO-220 | TO-220; TO-220-3 |
