Mosfet Array N and P-Channel 30V 6.8A, 4.6A 2W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 6.8A, 4.6A 2W Surface Mount 8-SO
Mosfet Array N and P-Channel 30V 6.8A, 4.6A 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 135291-IRF9389TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.8A, 4.6A
Gate-Source Threshold Voltage: 2.3V @ 10μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 398pF @ 15V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 30V 6.8A/4.6A 8SO Product overview: IRF9389TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.8A, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.8A, 4.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF9389TRPBF can be used for catalog matching and distributor lookup.
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MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9389TRPBFDKR-ND | 135291-IRF9389TRPBF | 289-IRF9389TRPBF | 2575510 | 91Y4762 | IRF9389TRPBF | IRF9389TRPBF | IRF9389TRPBF |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9389TRPBF | 30V 6.8A 4.6A MOSFET Transistor | MOSFETs | Mosfet, N & P-Ch, 30V, 6.8A, 150Deg C/2W; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Tape & Reel (TR) | SO-8; SO-8 | TO-3 | 8-SOIC (0.154", 3.90mm Width) | ||
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 2000 milliwatts | 2 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
