Win Source Part Number: 1065529-IRF9389PBF
Category: Discrete Semiconductor Products>Transistors
Series: HEXFET®
Package: Tube
Standard Package: 3,800
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001555848
Base Product Number: IRF9389
Mosfet Array N and P-Channel 30V 6.8A, 4.6A 2W Surface Mount 8-SO
MOSFET N/P-CH 30V 6.8A/4.6A 8SO
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1065529-IRF9389PBF | IRF9389PBF-ND | IRF9389PBF |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel |
