Mosfet Array 2 P-Channel (Dual) 30V 8A 2W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 30V 8A 2W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 30V 8A 2W Surface Mount 8-SO
MOSFET 2P-CH 30V 8A 8SOIC
MOSFET 2P-CH 30V 8A 8SO Product overview: IRF9362TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF9362TRPBF can be used for catalog matching and distributor lookup.
MOSFET HEXFET Dual P-Ch 30V 8A SOIC8
MOSFET HEXFET Dual P-Ch 30V 8A SOIC8
MOSFET HEXFET Dual P-Ch 30V 8A SOIC8
Manufacturer: Infineon Technologies
Win Source Part Number: 093108-IRF9362TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: IRF9362
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.4V @ 25μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Rds On at Id,Vgs: 21 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): Si4941EDY; SI4941EDY-T1; Si4941EDY-T1-E3;
Introduction Date: April 20, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
P CHANNEL, MOSFET, -30V, -8A, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.017ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl
MOSFET 2P-CH 30V 8A 8SO
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF9362TRPBFCT-ND | IRF9362TRPBF | 289-IRF9362TRPBF | 1300970P | 1300970 | 093108-IRF9362TRPBF | 79R7564 | IRF9362TRPBF | IRF9362TRPBF |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | 30V 8A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9362TRPBF | P Channel, Mosfet, -30V, -8A, Soic; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | SOIC | Soic | SOT3; 8-SO | TO-3 | ||
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||
| IDSS | 8000 milliamps | 8000 milliamps |
