Manufacturer: Infineon Technologies
Win Source Part Number: 093108-IRF9362TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: IRF9362
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.4V @ 25μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Rds On at Id,Vgs: 21 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): Si4941EDY; SI4941EDY-T1; Si4941EDY-T1-E3;
Introduction Date: April 20, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
MOSFET HEXFET Dual P-Ch 30V 8A SOIC8
MOSFET HEXFET Dual P-Ch 30V 8A SOIC8
MOSFET HEXFET Dual P-Ch 30V 8A SOIC8
Mosfet Array 2 P-Channel (Dual) 30V 8A 2W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 30V 8A 2W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 30V 8A 2W Surface Mount 8-SO
MOSFET 2P-CH 30V 8A 8SOIC
MOSFET 2P-CH 30V 8A 8SO
P CHANNEL, MOSFET, -30V, -8A, SOIC; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.017ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 093108-IRF9362TRPBF | 1300970P | 1300970 | IRF9362TRPBFCT-ND | IRF9362TRPBF | IRF9362TRPBF | 79R7564 | IRF9362TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9362TRPBF | MOSFETs | MOSFETs | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel, Mosfet, -30V, -8A, Soic; Transistor Polarity Infineon | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 2000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 8-SO | SOIC | Soic | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
