P-Channel 30V 9.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Win Source Part Number: 1028139-IRF9333PBF
Category: Discrete Semiconductor Products>Transistors
Series: HEXFET®
Package: Tube
Standard Package: 3,800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IRF9333TRPBF; FDS8878; IRF9332TRPBF; IRF9332PBF; SI4435DDY-T1-GE3; FDS8880IRF9333PBF.;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001554504
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, P-CHANNEL, -30V, 7.5A, 19 MOHM,SO-8
MOSFET P-CH 30V 9.2A 8SO
| DigiKey | Win Source Electronics | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF9333PBF-ND | 1028139-IRF9333PBF | 70019296 | IRF9333PBF |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET, P-CHANNEL, -30V, 7.5A, 19 MOHM,SO-8 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel |
