MOSFET P-CH 30V 9.8A 8SO Product overview: IRF9332PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9332PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 875069-IRF9332PBF
Series: HEXFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 9.8A (Ta) 2.5W (Ta) Surface Mount 8-SO
Package: Tube
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: Surface Mount
Part Status: Discontinued at Digi-Key
Categories: Discrete Semiconductor Products
Case / Package: 8-SO
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Limited
Quantity per package: 3800
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
P-Channel 30V 9.8A (Ta) 2.5W (Ta) Surface Mount 8-SO
MOSFET P-CH 30V 9.8A 8SO
MOSFET P-CH 30V 9.8A 8SO
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF9332PBF | 875069-IRF9332PBF | IRF9332PBF-ND | IRF9332PBF | IRF9332PBF |
| Product Name | 30V 9.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9332PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 2500 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) |
| Packing Method | Tube | Tube; Tube |
