Manufacturer: Infineon Technologies
Win Source Part Number: 117725-IRF8910TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10A
Gate-Source Threshold Voltage: 2.55V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 960pF @ 10V
Maximum Rds On at Id,Vgs: 13.4 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 10A 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO
MOSFET 2N-CH 20V 10A 8SO
MOSFET, DUAL N CH, 20V, 10A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V; PowerRoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 117725-IRF8910TRPBF | IRF8910TRPBF | IRF8910PBFCT-ND | IRF8910TRPBF | IRF8910TRPBF | 13AC9218 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8910TRPBF | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N Ch, 20V, 10A, Soic-8; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| PD | 2000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 |
