Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8910TRPBF IRF8910TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 117725-IRF8910TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10A Gate-Source Threshold Voltage: 2.55V @ 250μA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 960pF @ 10V Maximum Rds On at Id,Vgs: 13.4 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 117725-IRF8910TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10A Gate-Source Threshold Voltage: 2.55V @ 250μA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 960pF @ 10V Maximum Rds On at Id,Vgs: 13.4 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8910TRPBF - 117725-IRF8910TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8910TRPBF
117725-IRF8910TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8910TRPBF 117725-IRF8910TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 117725-IRF8910TRPBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 10A Gate-Source Threshold Voltage: 2.55V @ 250μA Max Gate Charge: 11nC @ 4.5V Max Input Capacitance: 960pF @ 10V Maximum Rds On at Id,Vgs: 13.4 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 117725-IRF8910TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10A
Gate-Source Threshold Voltage: 2.55V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Max Input Capacitance: 960pF @ 10V
Maximum Rds On at Id,Vgs: 13.4 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - IRF8910PBFCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF8910PBFCT-ND
FET, MOSFET Arrays IRF8910PBFCT-ND
Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - IRF8910PBFDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF8910PBFDKR-ND
FET, MOSFET Arrays IRF8910PBFDKR-ND
Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - IRF8910PBFTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
IRF8910PBFTR-ND
FET, MOSFET Arrays IRF8910PBFTR-ND
Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO

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FET, MOSFET Arrays - IRF8910TRPBF - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
IRF8910TRPBF
FET, MOSFET Arrays IRF8910TRPBF
MOSFET 2N-CH 20V 10A 8-SOIC

MOSFET 2N-CH 20V 10A 8-SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF8910TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF8910TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF8910TRPBF
MOSFET 2N-CH 20V 10A 8SO

MOSFET 2N-CH 20V 10A 8SO

Supplier's Site
Mosfet, Dual N Ch, 20V, 10A, Soic-8; Transistor Polarity Infineon - 13AC9218 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Ch, 20V, 10A, Soic-8; Transistor Polarity Infineon
13AC9218
Mosfet, Dual N Ch, 20V, 10A, Soic-8; Transistor Polarity Infineon 13AC9218
MOSFET, DUAL N CH, 20V, 10A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V; PowerRoHS Compliant: Yes

MOSFET, DUAL N CH, 20V, 10A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V; PowerRoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT DUAL NCh 20V 10A

MOSFET MOSFT DUAL NCh 20V 10A

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Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 117725-IRF8910TRPBF IRF8910PBFCT-ND IRF8910TRPBF IRF8910TRPBF 13AC9218 IRF8910TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF8910TRPBF FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N Ch, 20V, 10A, Soic-8; Transistor Polarity Infineon MOSFET
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 20 volts 20 volts
PD 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) TO-3
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