Manufacturer: Infineon Technologies
Win Source Part Number: 803257-IRF8910GPBF
Packaging: Tube
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Part Status: Obsolete (End Of Life)
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 95
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 13.4mOhm at 10A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 11nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 960pF at 10V
Current - Continuous Drain (Id) at 25°C: 10A
Vgs(th) (Maximum) at Id: 2.55V at 250μA
Part Number Series: IRF8910GPBF
MOSFET 2N-CH 20V 10A 8SO Product overview: IRF8910GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF8910GPBF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO
MOSFET 2N-CH 20V 10A 8SO
MOSFET 2N-CH 20V 10A 8-SO
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 803257-IRF8910GPBF | 289-IRF8910GPBF | IRF8910GPBF-ND | IRF8910GPBF | IRF8910GPBF |
| Product Name | FETs - Arrays - IRF8910GPBF | 20V 10A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SO-8; SOT3 | Tube | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | |
| Packing Method | Tube; Tube | Tube | Tube; Tube |
